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  creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm v v rms v v dc v i f(av) a i rrm a a ma dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308064 version: h13 mbr20h100ct thru mbr20h200ct taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data to-220ab case: to-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.8 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbr 20h100ct mbr 20h150ct mbr 20h200ct unit maximum repetitive peak reverse voltage 100 150 200 maximum rms voltage 70 105 140 maximum dc blocking voltage 100 150 200 maximum average forward rectified current 20 peak repetitive forward current (rated vr, square wave, 20khz) i frm 20 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse surge current (note 1) 1.0 0.5 maximum instantaneous forward voltage (note 2) i f = 10a, t j =25 i f = 10a, t j =125 i f = 20a, t j =25 i f = 20a, t j =125 v f v 0.85 0.88 0.75 0.75 0.95 0.97 0.85 0.85 maximum reverse current @ rated vr t j =25 t j =125 i r 5 2 voltage rate of change (rated v r ) 10000 typical thermal resistance 1.5 operating junction temperature range - 55 to +175 storage temperature range - 55 to +175 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle
creat by art part no. note 1: "xxx" defines voltage from 100v (mbr20h100ct) to 200v (mbr20h200ct) part no. mbr20h100ct mbr20h100ct mbr20h100ct (ta=25 unless otherwise noted) document number: ds_d1308064 version: h13 mbr20h100ct thru mbr20h200ct taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing mbr20hxxxct (note) prefix "h" c0 suffix "g" to-220ab 50 / tube example preferred p/n aec-q101 qualified packing code green compound code description mbr20h100ct c0 c0 mbr20h100ct c0g c0 g green compound mbr20h100cthc0 h c0 aec-q101 qualified ratings and characteristics curves 0 5 10 15 20 25 0 25 50 75 100 125 150 175 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.0001 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse a current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics per leg tj=75 tj=125 tj=25 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward a current (a) forward voltage (v) fig.3- typical instantaneous forward characteristics per leg pulse width=300 s 1% duty cycle tj=125 tj=25
creat by art min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1308064 version: h13 marking diagram mbr20h100ct thru mbr20h200ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1,000 10,000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance per leg 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance( /w) t-pulse duration. (sec) fig. 6- typical transient thermal impedance per leg
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1308064 version: h13 mbr20h100ct thru mbr20h200ct taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,


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